13
2500:Materials Science(比率: 40.9 %)
| DOI | タイトル | 著者 | ジャーナル | 発行年 | 科研費成果論文 |
|---|---|---|---|---|---|
| 10.1039/c8tc04193h | Radiation Damage Effects In Ga2O3 Materials And Devices | Kim, Jihyun, 0000-0002-5634-8394; Pearton, Stephen J., 0000-0001-6498-1256; Fares, Chaker, 0000-0001-9596-2381; Yang, Jiancheng; Ren, Fan, 0000-0001-9234-019X; Kim, Suhyun; Polyakov, Alexander Y. | Journal Of Materials Chemistry C | 2019 | NA |
| 10.1063/1.5034474 | Neal, Adam T.; Mou, Shin; Rafique, Subrina; Zhao, Hongping; Ahmadi, Elaheh, 0000-0002-8330-9366; Speck, James S.; Stevens, Kevin T.; Blevins, John D.; Thomson, Darren B.; Moser, Neil; Chabak, Kelson D.; Jessen, Gregg H., 0000-0002-0248-2547 | Applied Physics Letters | 2018 | NA | |
| 10.1063/1.5054826 | Ingebrigtsen, M. E., 0000-0003-2976-5827; Kuznetsov, A. Yu.; Svensson, B. G.; Alfieri, G.; Mihaila, A.; Badstubner, U.; Perron, A.; Vines, L.; Varley, J. B. | Apl Materials | 2019 | NA | |
| 10.1063/1.5058059 | Zhang, Yuewei, 0000-0002-4192-1442; Alema, Fikadu, 0000-0002-1007-7613; Mauze, Akhil; Koksaldi, Onur S., 0000-0001-7171-8050; Miller, Ross; Osinsky, Andrei; Speck, James S. | Apl Materials | 2019 | NA | |
| 10.1063/1.5062841 | Perspective: Ga2O3For Ultra-High Power Rectifiers And Mosfets | Pearton, S. J., 0000-0001-6498-1256; Ren, Fan, 0000-0001-9234-019X; Tadjer, Marko; Kim, Jihyun | Journal Of Applied Physics | 2018 | NA |
| 10.1063/1.5063807 | Deep Acceptors And Their Diffusion In Ga2O3 | Peelaers, Hartwin, 0000-0002-7141-8688; Lyons, John L., 0000-0001-8023-3055; Varley, Joel B., 0000-0002-5384-5248; Van De Walle, Chris G., 0000-0002-4212-5990 | Apl Materials | 2019 | NA |
| 10.1063/1.5109678 | Feng, Zixuan; Anhar Uddin Bhuiyan, A F M; Karim, Md Rezaul, 0000-0002-1313-7095; Zhao, Hongping | Applied Physics Letters | 2019 | NA | |
| 10.1063/1.5123213 | Ahmadi, Elaheh, 0000-0002-8330-9366; Oshima, Yuichi, 0000-0001-8293-4891 | Journal Of Applied Physics | 2019 | NA | |
| 10.1063/1.5142195 | Point Defects In Ga2O3 | Mccluskey, Matthew D., 0000-0002-0786-4106 | Journal Of Applied Physics | 2020 | NA |
| 10.1063/1.5142999 | Recent Progress On The Electronic Structure, Defect, And Doping Properties Of Ga2O3 | Zhang, Jiaye; Shi, Jueli; Qi, Dong-Chen, 0000-0001-8466-0257; Chen, Lang; Zhang, Kelvin H. L., 0000-0001-9352-6236 | Apl Materials | 2020 | NA |
| 10.1088/1361-6641/aadf78 | Galazka, Zbigniew, 0000-0003-0812-2873 | Semiconductor Science And Technology | 2018 | NA | |
| 10.1109/led.2018.2884542 | Current Aperture Vertical |
Wong, Man Hoi, 0000-0002-0908-4509; Goto, Ken; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka, 0000-0003-2821-3107 | Ieee Electron Device Letters | 2019 | NA |
| 10.1149/2.0341907jss | Tadjer, Marko J., 0000-0002-2388-2937; Lyons, John L., 0000-0001-8023-3055; Nepal, Neeraj; Freitas, Jaime A.; Koehler, Andrew D.; Foster, Geoffrey M. | Ecs Journal Of Solid State Science And Technology | 2019 | NA |